參數(shù)資料
型號(hào): AO4922
廠商: ALPHA
英文描述: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 非對稱雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 168K
代理商: AO4922
Symbol
V
DS
V
GS
Max FET1 Max FET2
30
±12
9.0
7.2
40
22
73
2.0
1.3
-55 to 150 -55 to 150
30
±12
7.3
5.9
40
12
22
2.0
1.3
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
B
A
mJ
°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
A
W
Units
V
V
Parameter
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
°C/W
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
R
θ
JA
T
A
=25°C
I
DSM
AO4922
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
FET1
FET2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9A I
D
=7.3A (V
GS
= 10V)
R
DS(ON)
< 15.8m
<24m
(V
GS
= 10V)
R
DS(ON)
< 18.5m
<29m
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4922 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
Standard Product AO4922 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4922L is a Green Product ordering option.
AO4922L and AO4922 are electrically identical.
SOIC-8
SRFET
TM
S
oft
R
ecovery MOS
FET
:
Integrated Schottky Diode
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
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AOF800L Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AO4924_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET
AO4924L 功能描述:MOSFET 2N-CH 30V 9A/7.3A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:SRFET?? 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:2 個(gè) N 溝道(雙) FET 功能:邏輯電平門 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):- 不同?Id,Vgs 時(shí)的?Rds On(最大值):15.8 毫歐 @ 9A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):31nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):1885pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1
AO4926 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor