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參數(shù)資料
| 型號(hào)： | AO4922 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | AO4922 |
AO4922
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=24V, V
GS
=0V
0.01
6
0.1
20
0.1
2.4
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.5
40
1.8
V
A
13
20.2
15
78
0.38
15.8
25.2
18.5
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.5
4
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1980
317
111
1.3
2574
pF
pF
pF
2.0
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
33.0
15.0
5.3
6.0
5.5
5.5
27.0
4.3
11
7
43
nC
nC
nC
ns
ns
ns
ns
13
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=9A, dI/dt=300A/
μ
s
Drain-Source Breakdown Voltage
I
D
=250uA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=9A
Reverse Transfer Capacitance
Gate resistance
I
F
=9A, dI/dt=300A/
μ
s
V
DS
=V
GS
I
D
=250
μ
A
FET1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±12V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
m
V
GS
=4.5V, I
D
=7A
V
DS
=5V, I
D
=9A
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.7
,
R
GEN
=3
Turn-On DelayTime
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=9A
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
A: The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are based on T
J(MAX)
=150°C, using t
≤
10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev0:Sept 2006
Alpha & Omega Semiconductor, Ltd.
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| AO4922_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
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| AO4926 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
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