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參數(shù)資料
| 型號： | AO4918 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對稱雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | AO4918 |
AO491
8
Symbol
Units
R
θ
JL
Symbol
Units
R
θ
JL
R
θ
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Junction-to-Lead
C
Steady-State
86
26.6
50.4
R
θ
JA
62.5
110
40
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
110
40
Maximum Junction-to-Lead
C
Steady-State
30.5
Typ
53
81.9
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t
≤
10s
Thermal Characteristics Schottky
62.5
62.5
110
40
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
Max
°C/W
°C/W
Parameter: Thermal Characteristics MOSFET Q2
Maximum Junction-to-Ambient
A
Typ
53
81.9
30.5
Max
t
≤
10s
R
θ
JA
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev4: August 2005
Alpha Omega Semiconductor, Ltd.
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