參數(shù)資料
型號: AM49PDL640AG
英文描述: 120NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am49PDL640AG -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 61/69頁
文件大小: 1062K
代理商: AM49PDL640AG
August 5, 2003
Am49PDL640AG
59
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Read Cycle
Note:
1. CE1# = OE# = V
IL
, CE2 = WE# = V
IH
, UB# or/and LB# = V
IL
Figure 29.
pSRAM Read Cycle–Address Controlled
Note:
1. CE2 = WE# = V
IH
Figure 30.
pSRAM Read Cycle–CS1# Controlled
Read Cycle 1-Addressed Controlled
Address
t
RC
t
OH
t
AA
t
OH
Previous Data Valid
Data Valid
Data Out
Address
Data Out
CE
1#
UB#,
LB#
OE#
High-Z
High-Z
Data Valid
t
RC
t
AA
t
CO
t
LZ
t
OH
t
HZ
t
BHZ
t
OHZ
t
OLZ
t
OE
t
BLZ
t
BA
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