參數(shù)資料
型號(hào): AM49PDL640AG
英文描述: 120NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am49PDL640AG -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁(yè)數(shù): 52/69頁(yè)
文件大?。?/td> 1062K
代理商: AM49PDL640AG
50
Am49PDL640AG
August 5, 2003
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
OE#
CE#f
Addresses
V
CC
f
WE#
Data
2AAh
SADD
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 19.
Chip/Sector Erase Operation Timings
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