參數(shù)資料
型號(hào)： AM49PDL640AG
英文描述： 120NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述： Am49PDL640AG -堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁(yè)數(shù)： 43/69頁(yè)
文件大?。?/td> 1062K
代理商： AM49PDL640AG
August 5, 2003
Am49PDL640AG
41
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
Not 100% tested.
5.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; V
ID
= 12.5 V
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
±
1.0
μA
I
LIT
RESET# Input Load Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
, V
CC
= V
CC max
5 MHz
10
20
mA
10 MHz
25
45
I
CC2
V
CC
Active Write Current (Notes 2, 3)
CE# = V
IL
,
OE# = V
IH
, WE# = V
IL
15
30
mA
I
CC3
V
CC
Standby Current (Note 2)
CE#, RESET#, WP#/ACC = V
IO
±
0.3 V
1
5
μA
I
CC4
V
CC
Reset Current (Note 2)
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
1
5
μA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
1
5
μA
I
CC6
V
Active Read-While-Program Current
(Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
Word
21
45
mA
I
CC7
V
Active Read-While-Erase Current
(Notes 1, 2)
CE# = V
IL
, OE# = V
IH
Word
21
45
mA
I
CC8
V
Active Program-While-Erase-
Suspended Current (Notes 2, 5)
CE# = V
IL
, OE# = V
IH
17
35
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.3
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CCS
I
OH
= –100 μA, V
CCf
= V
CCS
I
OH
= –2.0 mA, V
CC
= V
CCS
0.4
V
V
OH
Output High Voltage
V
IO
–0.1
V
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage (Note 5)
2.3
2.5
V
相關(guān)PDF資料
PDF描述
AM50-0002 Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:25-35 RoHS Compliant: No
AM50-0002RTR LJT 128C 128#22 PIN RECP
AM50-0002SMB LJT 128C 128#22 PIN RECP
AM50-0002TR Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
AM50-0006V2 Low Noise Amplifier 1400 - 2000 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM49PDL640AG70NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
AM49PDL640AG70NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
AM49PDL640AG85NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
AM49PDL640AG85NT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
AM49PDL640AGA70NS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*