參數(shù)資料
型號: AM49PDL640AG
英文描述: 120NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am49PDL640AG -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 59/69頁
文件大小: 1062K
代理商: AM49PDL640AG
August 5, 2003
Am49PDL640AG
57
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Power Up Time
Figure 27.
Power Up
V
CCS
Slew Rate
Note:
1. At any time during Power Up, the V
CCS
slew rate (i.e. rate of change) must not exceed 58 V/ms (alternately, it must exceed
17
μ
s/V).
Figure 28.
V
CCS
Slew Rate
~
200
μ
s
CE#1s
CE2s
V
CC
s
dV/dt
58 V/ms
V
CCS
t
0
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