參數(shù)資料
型號(hào): AD7471
廠商: Analog Devices, Inc.
英文描述: 1.4us,642μW Micropower12-Bit Parallel ADC(12位高速,低耗,逐次逼近式A/D轉(zhuǎn)換器)
中文描述: 1.4us,642μWMicropower12位并行ADC(12位高速,低耗,逐次逼近式的A / D轉(zhuǎn)換器)
文件頁數(shù): 5/13頁
文件大小: 203K
代理商: AD7471
AD7471
–5–
REV. PrB
Prelimnary Technical Data
TECHNCAL
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the X X 0000 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
OR D E R ING GUID E
Resolution Package
(Bits)
Option
1
Model
Range
Branding
AD7471AR
AD7471ARU
-40°C to +85°C
-40°C to +85°C
12
12
R-24
RU-24
EVAL-AD7471CB
2
EVAL-CONT ROL BOARD
3
Evaluation Board
Controller Board
NOT ES
1
R = SOIC; RU = T SSOP.
2
T his can be used as a stand-alone evaluation board or in conjunction with the EVAL -CONT ROL BOARD for evaluation/
demonstration purposes.
3
T his board is a complete unit allowing a PC to control and communicate with all Analog Devices evaluation boards ending in the CB
designators.
A BSOL UT E MA X IMUM R A T INGS
`1
(T
A
= +25
o
C unless otherwise noted)
AV
DD
to AGND/DGND ..........................-0.3V to +7V
DV
DD
to AGND/DGND ..........................-0.3V to +7V
V
DRIVE
to AGND/DGND .........................-0.3V to +7V
AV
DD
to DV
DD
.................................... -0.3V to +0.3V
V
DRIVE
to DV
DD
........................... -0.3V to DV
DD
+0.3V
AGND T O DGND .............................-0.3V to +0.3V
Analog Input Voltage to AGND ...-0.3V to AVDD+0.3V
Digital Input Voltage to DGND ..-0.3V to DVDD+0.3V
REF IN to AGND .....................-0.3V to AVDD+0.3V
Input Current to Any Pin Except Supplies
2
..........±10mA
Operating T emperature Range
Commercial (A Version) ....................-40
o
C to +85
o
C
Storage T emperature Range .............-65
o
C to +150
o
C
Junction T emperature ................................. +150
o
C
SOIC, T SSOP Package Dissipation ............ +450mW
θ
JA
T hermal Impedance ...................... 75
o
C/W (SOIC)
................... 115
o
C/W(T SSOP)
θ
JC
T hermal Impedance ....................... 25
o
C/W (SOIC)
................... 35
o
C/W (T SSOP)
Lead T emperature, Soldering
Vapor Phase (60 secs) ................................. +215
o
C
Infared (15 secs) ....................................... +220
o
C
NOT ES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
T ransient currents of up to 100 mA will not cause SCR latch up.
DB9
DB10
DGND
DV
DD
REF IN
CS
DB11(MSB)
AVDD
AGND
DB3
14
1
2
24
23
5
6
7
20
19
18
3
4
22
21
8
17
9
16
10
15
11
TOP VIEW
(Not to Scale)
12
13
AD7471
DB2
DB1
CLK IN
BUSY
DB0 (LSB)
DB4
VIN
RD
CONVST
DB5
V
DRIVE
DB6
DB7
DB8
A D7471 PIN CONFIGURA TION
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