參數(shù)資料
型號： A48P4616
廠商： AMIC Technology Corporation
英文描述： CAP 330PF 50V CERAMIC MONO 5%
中文描述： 16米x 16位DDR內(nèi)存
文件頁數(shù)： 14/71頁
文件大小： 2068K
代理商： A48P4616
A48P4616
Preliminary (September, 2005, Version 0.0)
13
AMIC Technology, Corp.
Deselect
The Deselect function prevents new commands from
being executed by the DDR SDRAM. The DDR
SDRAM is effectively deselected. Operations already
in progress are not affected.
No Operation (NOP)
The No Operation (NOP) command is used to perform a
NOP to a DDR SDRAM. This prevents unwanted commands
from being registered during idle or wait states. Operations
already in progress are not affected.
Mode Register Set
The mode registers are loaded via inputs A0-A12, BA0 and
BA1 while issuing the Mode Register Set Command. See
mode register descriptions in the Register Definition section.
The Mode Register Set command can only be issued when
all banks are idle and no bursts are in progress. A
subsequent executable command cannot be issued until t
MRD
is met.
Active
The Active command is used to open (or activate) a row in a
particular bank for a subsequent access. The value on the
BA0, BA1 inputs selects the bank, and the address provided
on inputs A0-A12 selects the row. This row remains active
(or open) for accesses until a Precharge (or Read or Write
with Auto Precharge) is issued to that bank. A Precharge (or
Read or Write with Auto Precharge) command must be
issued and completed before opening a different row in the
same bank.
Read
The Read command is used to initiate a burst read access to
an active (open) row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-Ai,
Aj (where [i = 9, j = don’t care] for x8; where [i = 9, j = 11] for
x4) selects the starting column location. The value on input
A10 determines whether or not Auto Precharge is used. If
Auto Precharge is selected, the row being accessed is
precharged at the end of the Read burst; if Auto Precharge is
not selected, the row remains open for subsequent accesses.
Write
The Write command is used to initiate a burst write access to
an active (open) row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-Ai,
Aj (where [i = 9, j = don’t care] for x8; where [i = 9, j = 11] for
x4) selects the starting column location. The value on input
A10 determines whether or not Auto Precharge is used.
If Auto Precharge is selected, the row being accessed is
precharged at the end of the Write burst; if Auto Precharge is
not selected, the row remains open for subsequent accesses.
Input data appearing on the DQs is written to the memory
array subject to the DM input logic level appearing coincident
with the data. If a given DM signal is registered low, the
corresponding data is written to memory; if the DM signal is
registered high, the corresponding data inputs are ignored,
and a Write is not executed to that byte/column location.
Precharge
The Precharge command is used to deactivate (close) the
open row in a particular bank or the open row(s) in all banks.
The bank(s) will be available for a subsequent row access a
specified time (t
RP
) after the Precharge command is issued.
Input A10 determines whether one or all banks are to be
precharged, and in the case where only one bank is to be
precharged, inputs BA0, BA1 select the bank. Otherwise BA0,
BA1 are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated prior
to any Read or Write commands being issued to that bank. A
precharge command is treated as a NOP if there is no open
row in that bank, or if the previously open row is already in
the process of precharging.
Auto Precharge
Auto Precharge is a feature which performs the same
individual-bank precharge function described above, but
without requiring an explicit command. This is accomplished
by using A10 to enable Auto Precharge in conjunction with a
specific Read or Write command. A precharge of the
bank/row that is addressed with the Read or Write command
is automatically performed upon completion of the Read or
Write burst. Auto Precharge is non-persistent in that it is
either enabled or disabled for each individual Read or Write
command. Auto Precharge ensures that the precharge is
initiated at the earliest valid stage within a burst. This is
determined as if an explicit Precharge command was issued
at the earliest possible time without violating t
RAS(min)
. The
user must not issue another command to the same bank until
the precharge (t
RP
) is completed.
The NTC DDR SDRAM devices supports the optional t
RAS
lockout feature. This feature allows a Read command with
Auto Precharge to be issued to a bank that has been
activated (opened) but has not yet satisfied the t
RAS(min)
specification. The t
RAS
lockout feature essentially delays the
onset of the auto precharge operation until two conditions
occur. One, the entire burst length of data has been
successfully prefetched from the memory array; and two,
t
RAS(min)
has been satisfied.
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