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寤犲晢锛� Microsemi SoC
鏂囦欢闋�(y猫)鏁�(sh霉)锛� 2/98闋�(y猫)
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妯�(bi膩o)婧�(zh菙n)鍖呰锛� 90
绯诲垪锛� ACT™ 1
LAB/CLB鏁�(sh霉)锛� 547
杓稿叆/杓稿嚭鏁�(sh霉)锛� 69
闁€鏁�(sh霉)锛� 2000
闆绘簮闆诲锛� 4.5 V ~ 5.5 V
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
宸ヤ綔婧害锛� 0°C ~ 70°C
灏佽/澶栨锛� 80-TQFP
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 80-VQFP锛�14x14锛�
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10
Ab s o l u t e Ma x i mu m R a t i n g s 1
Free air temperature range
Notes:
1.
Stresses beyond those listed under 鈥淎bsolute Maximum Ratings鈥�
may cause permanent damage to the device. Exposure to
absolute maximum rated conditions for extended periods may
affect device reliability. Devices should not be operated outside
the recommended operating conditions.
2.
VPP = VCC , except during device programming.
3.
VSV = VCC , except during device programming.
4.
VKS = GND , except during device programming.
5.
Device inputs are normally high impedance and draw extremely
low current. However, when input voltage is greater than VCC +
0.5V or less than GND 鈥� 0.5V, the internal protection diode will be
forward biased and can draw excessive current.
Re com m e nde d Op er at i n g Co ndi t i on s
Notes:
1.
Ambient temperature (TA) is used for commercial and
industrial; case temperature (TC) is used for military.
2.
All power supplies must be in the recommended operating range.
For more information, refer to the Power-Up Design Considerations
application note at http://www.actel.com/appnotes.
E l e c tric a l S p e c ific a t io n s
Notes:
1.
Actel devices can drive and receive either CMOS or TTL signal levels. No assignment of I/Os as TTL or CMOS is required.
2.
Tested one output at a time, VCC = min.
3.
Not tested; for information only.
4.
VOUT = 0V, f = 1 MHz
Symbol
Parameter
Limits
Units
VCC
DC Supply Voltage2, 3, 4
鈥�0.5 to +7.0
V
VI
Input Voltage
鈥�0.5 to VCC +0.5
V
VO
Output Voltage
鈥�0.5 to VCC +0.5
V
IIO
I/O Source Sink
Current5
卤20
mA
TSTG
Storage Temperature
鈥�65 to +150
掳C
Parameter
Commercial
Military
Units
Temperature
Range1
0 to +70
鈥�55 to +125
掳C
Power Supply
Tolerance2
卤5
卤10
%VCC
Symbol
Parameter
Test Condition
Commercial
Military
Units
Min.
Max.
Min.
Max.
VOH
1, 2
HIGH Level Output
IOH = 鈥�4 mA (CMOS)
3.7
V
IOH = 鈥�6 mA (CMOS)
3.84
V
VOL
1, 2
LOW Level Output
IOL = +6 mA (CMOS)
0.33
0.4
V
VIH
HIGH Level Input
TTL Inputs
2.0
VCC + 0.3
2.0
VCC + 0.3
V
VIL
LOW Level Input
TTL Inputs
鈥�0.3
0.8
鈥�0.3
0.8
V
IIN
Input Leakage
VI = VCC or GND
鈥�10
+10
鈥�10
+10
A
IOZ
3-state Output Leakage
VO = VCC or GND
鈥�10
+10
鈥�10
+10
A
CIO
I/O Capacitance3, 4
10
pF
ICC(S)
Standby VCC Supply Current VI = VCC or GND, IO = 0 mA
ACT 1
3
20
mA
ACT 2/3/1200XL/3200DX
2
20
mA
ICC(D)
Dynamic VCC Supply Current
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