參數(shù)資料
型號(hào)： 28F640J3C-120
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁數(shù)： 61/72頁
文件大?。?/td> 905K
代理商： 28F640J3C-120
256-Mbit J3 (x8/x16)
Datasheet
61
Figure 20. Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
SR.7 =
Full Status
Check if Desired
Byte/Word
Program Complete
Read Status
Register Data
(See Above)
Voltage Range Error
Device Protect Error
Programming Error
Byte/Word
Program
Successful
SR.3 =
SR.1 =
SR.4 =
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
Write
Standby
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR full status check can be done after each program operation, or
after a sequence of programming operations.
Write FFH after the last program operation to place device in read
array mode.
Bus
Operation
Standby
Standby
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
1
1
0
1
0
1
0
Command
Setup Byte/
Word Program
Byte/Word
Program
Comments
Data = 40H
Addr = Location to Be Programmed
Data = Data to Be Programmed
Addr = Location to Be Programmed
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = Programming to Voltage Error
Detect
Check SR.4
1 = Programming Error
Read
(Note 1)
Status Register Data
Standby
Check SR.1
1 = Device Protect Detect
RP# = V
, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
相關(guān)PDF資料
PDF描述
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
28M0UC 60V 300mA MONOLITHIC DIODE ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F640L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*