參數(shù)資料
型號(hào)： 28F640J3C-120
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁(yè)數(shù)： 21/72頁(yè)
文件大?。?/td> 905K
代理商： 28F640J3C-120
256-Mbit J3 (x8/x16)
Datasheet
21
V
PENH
V
during Block Erase,
Program, or Lock-Bit Operations
2.7
3.6
V
3,4
V
LKO
V
CC
Lockout Voltage
2.0
V
5
NOTES:
1. Includes STS.
2. Sampled, not 100% tested.
3. Block erases, programming, and lock-bit configurations are inhibited when V
≤
V
,
and not guaranteed in the range between V
PENLK
(max) and V
PENH
(min), and above V
PENH
(max).
4. Typically, V
is connected to V
(2.7 V–3.6 V).
5. Block erases, programming, and lock-bit configurations are inhibited when V
CC
< V
, and
not guaranteed in the range between V
(min) and V
(min), and above V
(max).
6. Includes all operational modes of the device including standby and power-up sequences.
7. VCC operating condition for standby has to meet typical operationg coditons.
Table 7. DC Voltage Characteristics
Symbol
Parameter
Min
Max
Unit
Test Conditions
Notes
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