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參數(shù)資料
| 型號(hào)： | 28F640J3C-120 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特爾StrataFlash存儲(chǔ)器（J3） |
| 文件頁(yè)數(shù)： | 6/72頁(yè) |
| 文件大?。?/td> | 905K |
| 代理商： | 28F640J3C-120 |
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Contents
6
Datasheet
07/27/01
-009
Added Figure 4,
3 Volt Intel StrataFlash
Memory VF BGA Package (32 Mbit)
Added Figure 5,
3 Volt Intel StrataFlash
Memory VF BGA Mechanical
Specifications
Updated Operating Temperature Range to Extended (Section 6.1 and Table 22)
Reduced t
EHQZ
to 35 ns. Reduced t
WHEH
to 0 ns
Added parameter values for –40 °C operation to Lock-Bit and Suspend Latency
Updated V
LKO
and V
PENLK
to 2.2 V
Removed Note #4, Section 6.4 and Section 6.6
Minor text edits
10/31/01
-010
Added notes under lead descriptions for VF BGA Package
Removed 3.0 V - 3.6 V Vcc, and Vccq columns under AC Characteristics
Removed byte mode read current row un DC characteristics
Added ordering information for VF BGA Package
Minor text edits
03/21/02
-011
Changed datasheet to reflect the best known methods
Updated max value for Clear Block Lock-Bits time
Minor text edits
12/12/02
-012
Added nomenclature for J3C (0.18 μm) devices.
01/24/03
-013
Added 115 ns access speed 64 Mb J3C device. Added 120 ns access speed 128
Mb J3C device. Added “TE” package designator for J3C TSOP package.
12/09/03
-014
Revised Asynchronous Page Read description. Revised Write-to-Buffer flow
chart. Updated timing waveforms. Added 256-Mbit J3C pinout.
1/3/04
-015
Added 256Mbit device timings, device ID, and CFI information. Also corrected
VLKO specification.
1/23/04
-016
Corrected memory block count from 257 to 255.
1/23/04
-016
Memory block count fix.
5/19/04
-018
Restructured the datasheet layout.
7/7/04
-019
Added lead-free part numbers and 8-word page information.
11/23/04
-020
Added Note to DC Voltage Characteristics table; “Speed Bin” to Read Operations
table; Corrected format for AC Waveform for Reset Operation figure; Corrected
“R” and “8W” headings in Enhanced Configuration Register table because they
were transposed; Added 802 and 803 to ordering information and corrected 56-
Lead TSOP combination number.
3/24/05
-021
Corrected ordering information.
Date of
Revision
Version
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28LV64A | 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM) |
| 28M0U | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DC | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DS | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0UC | 60V 300mA MONOLITHIC DIODE ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640J3D75 | 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
| 28F640L18 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| 28F640L30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
| 28F640P3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
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