參數(shù)資料
型號： 28F640J3C-120
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 32/72頁
文件大?。?/td> 905K
代理商： 28F640J3C-120
256-Mbit J3 (x8/x16)
32
Datasheet
9.0
Bus Operations
This section provides an overview of device bus operations. The on-chip Write State Machine
(WSM) manages all erase and program algorithms. The system CPU provides control of all in-
system read, write, and erase operations of the device via the system bus.
Device commands are written to the CUI to control all of the flash memory device’s operations.
The CUI does not occupy an addressable memory location; it’s the mechanism through which the
flash device is controlled.
9.1
Bus Operations Overview
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash
memory conform to standard microprocessor bus cycles.
Table 12. Bus Operations
Mode
RP#
CE[2:0]
(1)
OE#
(2)
WE#
(2)
Address
VPEN
Data
(3)
STS
(default
mode)
Notes
Read Array
V
IH
V
IH
Enabled
V
IL
V
IH
V
IH
V
IH
X
X
D
OUT
High Z
High Z
(7)
4,5,6
Output Disable
Enabled
X
X
X
Standby
V
IH
Disabled
X
X
X
X
High Z
X
Reset/Power-Down
Mode
V
IL
X
X
X
X
X
High Z
High Z
(7)
Read Identifier Codes
V
IH
Enabled
V
IL
V
IH
See
Table 17
X
Note 8
High Z
(7)
Read Query
V
IH
Enabled
V
IL
V
IH
See
Table
10.3
X
Note 9
High Z
(7)
Read Status (WSM off)
V
IH
Enabled
V
IL
V
IH
X
X
D
OUT
D7
= D
OUT
D[15:8]
= High Z
D[6:0]
= High Z
Read Status (WSM on)
V
IH
Enabled
V
IL
V
IH
X
X
Write
V
IH
Enabled
V
IH
V
IL
X
V
PENH
D
IN
X
6,10,11
NOTES:
1. See
Table 13 on page 33
for valid CE configurations.
2. OE# and WE# should never be enabled simultaneously.
3. D refers to D[7:0] if BYTE# is low and D[15:0] if BYTE# is high.
4. Refer to
DC Characteristics
. When V
≤
V
, memory contents can be read, but not altered.
5. X can be V
or V
IH
for control and address signals, and V
PENLK
or V
PENH
for V
PEN
. See
DC Characteristics
for V
PENLK
and
V
voltages.
6. In default mode, STS is V
when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It
is V
when the WSM is not busy, in block erase suspend mode (with programming inactive), program suspend mode, or
reset/power-down mode.
7. High Z will be V
with an external pull-up resistor.
8. See
Section 10.2, “Read Identifier Codes” on page 39
for read identifier code data.
9. See
Section 10.3, “Read Query/CFI” on page 41
for read query data.
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when V
PEN
= V
PENH
and V
CC
is within specification.
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