參數(shù)資料
型號(hào): 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁(yè)數(shù): 54/59頁(yè)
文件大?。?/td> 321K
代理商: 28F320C3
28F800C3, 28F160C3, 28F320C3
E
54
PRELIMINARY
Table 9. Protection Register Information
Description
(Optional flash features and commands)
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection bytes are available
Offset
(1)
P = 35h
(P+E)h
Length
Add.
Hex
Code
--01
Value
1
43:
01
(P+F)h
(P+10)h
(P+11)h
(P+12)h
4
44:
45:
46:
47:
--80
--00
--03
--03
80h
00h
8 byte
8 byte
Protection Field 1: Protection Description
This field describes user-available One Time
Programmable (OTP) Protection register bytes. Some are
pre-programmed with device-unique serial numbers.
Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte. The
following bytes are factory pre-programmed and user-
programmable.
bits 0–7 = Lock/bytes JEDEC-plane physical low address
bits 8–15 = Lock/bytes JEDEC -plane physical high
address
bits 16–23 = “n” such that 2
bytes
bits 24–31 = “n” such that 2
Reserved for future use
n
= factory pre-programmed
n
= user programmable bytes
(P+13)h
48:
NOTES:
1.
The variable P is a pointer which is defined at CFI offset 15h.
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
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28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
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