參數(shù)資料
型號(hào)： 28F320C3
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 32M X 8 FLASH 3V PROM
文件頁數(shù)： 25/59頁
文件大?。?/td> 321K
代理商： 28F320C3
E
4.0
28F800C3, 28F160C3, 28F320C3
25
PRELIMINARY
ELECTRICAL SPECIFICATIONS
4.1
Absolute Maximum Ratings*
Extended Operating Temperature
During Read ..........................
–40 °C to +85 °C
During Block Erase
and Program.......................... –40 °C to +85 °C
Temperature Under Bias........ –40 °C to +85 °C
Storage Temperature................. –65 °C to +125 °C
Voltage on Any Pin
(except V
CC
and V
PP
)
with Respect to GND .............–0.5 V to +3.7 V
1
V
PP
Voltage (for Block
Erase and Program)
with Respect to GND .......–0.5 V to +13.5 V
1,2,4
V
CC
and V
CCQ
Supply Voltage
with Respect to GND .............–0.2 V to +3.6 V
1
Output Short Circuit Current...................... 100 mA
3
NOTICE:
This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available.
Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is
–0.5 V on input/output pins.
During transitions, this level may undershoot to –2.0 V
for periods < 20 ns. Maximum DC voltage on
input/output pins is V
+ 0.5 V which, during
transitions, may overshoot to V
CC
+ 2.0 V for periods
< 20 ns.
2.
Maximum DC voltage on V
PP
may overshoot to +14.0 V
for periods < 20 ns.
3.
Output shorted for no more than one second. No more
than one output shorted at a time.
4.
V
voltage is normally 1.65 V–3.6 V. Connection to
supply of 11.4 V–12.6 V can only be done for 1000
cycles on the main blocks and 2500 cycles on the
parameter blocks during program/erase. V
may be
connected to 12 V for a total of 80 hours maximum.
See Section 3.5 for details.
4.2
Operating Conditions
Table 10. Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC1
V
CC
Supply Voltage
1
2.7
3.6
Volts
V
CC2
1
3.0
3.6
V
CCQ1
I/O Supply Voltage
1
2.7
3.6
Volts
V
PP1
Supply Voltage
1
1.65
3.6
Volts
V
PP2
1, 2
11.4
12.6
Volts
Cycling
Block Erase Cycling
2
100,000
Cycles
NOTES:
1.
2.
V
CC
and V
CCQ
must share the same supply when they are in the V
CC1
range.
Applying V
=
11.4 V
–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of 80 hours maximum. See Section
3.5 for details
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
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