參數(shù)資料
型號(hào): 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁數(shù): 49/59頁
文件大小: 321K
代理商: 28F320C3
E
28F800C3, 28F160C3, 28F320C3
49
PRELIMINARY
Table C2. Example of Query Structure Output of x16 and x8 Devices
Word Addressing
Byte Addressing
Offset
Hex Code
Value
Offset
Hex Code
Value
A
15
–A
0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
D
15
–D
0
A
7
–A
0
10h
11h
12h
13h
14h
15h
16h
17h
18h
...
D
7
–D
0
0051
0052
0059
P_ID
LO
P_ID
HI
P
LO
P
HI
A_ID
LO
A_ID
HI
...
“Q”
“R”
“Y”
51
52
59
“Q”
“R”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
...
P_ID
LO
P_ID
LO
P_ID
HI
...
PrVendor
ID #
ID #
...
C.2
QUERY STRUCTURE OVERVIEW
The Query command causes the flash component to display the Common Flash Interface (CFI) Query
structure or “database.” The structure sub-sections and address locations are summarized below.
Table C3. Query Structure
(1)
Offset
Sub-Section Name
Description
00h
Manufacturer Code
01h
Device Code
(BA+2)h
(2)
Block Status Register
Block-Specific Information
04-0Fh
Reserved
Reserved for Vendor-Specific Information
10h
CFI Query Identification String
Command Set ID and Vendor Data Offset
1Bh
System Interface Information
Device Timing and Voltage Information
27h
Device Geometry Definition
Flash Device Layout
P
(3)
Primary Intel
-
Specific Extended Query
Table
Vendor
-
Defined Additional Information
Specific to the Primary Vendor Algorithm
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a function of
device bus width and mode.
2. BA = The beginning location of a Block Address (e.g., 08000h is the beginning location of block 1 when the block size is
32 Kword).
3. Offset 15 defines
“P” which points to the Primary Intel
-
specific Extended Query Table.
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
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