參數(shù)資料
型號: 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁數(shù): 45/59頁
文件大小: 321K
代理商: 28F320C3
E
28F800C3, 28F160C3, 28F320C3
45
PRELIMINARY
Start
Write B0H
Read Status Register
No
Comments
Data = B0H
Addr = X
Data = FFH
Addr = X
SR.7 =
SR.6 =
1
Write FFH
Read Array Data
Erase Completed
Done
Reading
Yes
Write FFH
Write D0H
Erase Resumed
Read Array Data
0
1
Read array data from block
other than the one being
erased.
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.6
1 = Erase Suspended
0 = Erase Completed
Data = D0H
Addr = X
Bus
Operation
Write
Standby
Write
Read
Standby
Read
Command
0
Write 70H
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Write
Write
Data=70H
Addr=X
Erase Suspend
Read Status
Read Array
Erase Resume
Figure 14. Erase Suspend/Resume Flowchart
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器)
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