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參數(shù)資料
| 型號： | 28F320C3 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 中文描述： | 32M X 8 FLASH 3V PROM |
| 文件頁數(shù)： | 23/59頁 |
| 文件大?。?/td> | 321K |
| 代理商： | 28F320C3 |
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E
28F800C3, 28F160C3, 28F320C3
23
PRELIMINARY
V
CC
V
PP
12 V Fast Programming
Absolute Write Protection With V
PP
≤
V
PPLK
System Supply
12 V Supply
10
≤
K
V
CC
V
PP
System Supply
12 V Supply
Low Voltage and 12 V Fast Programming
V
CC
V
PP
System Supply
Prot#
(Logic Signal)
V
CC
V
PP
System Supply
Low-Voltage Programming
Low-Voltage Programming
Absolute Write Protection via Logic Signal
(Note 1)
0645_06
NOTE:
1.
A resistor can be used if the V
CC
supply can sink adequate current based on resistor value. See AP-657 Designing with
the Advanced+ Boot Block Flash Memory Architecturefor details.
Figure 5. Example Power Supply Configurations
3.6
Power Consumption
Intel Flash devices have a tiered approach to power
savings that can significantly reduce overall system
power consumption. The Automatic Power Savings
(APS) feature reduces power consumption when
the device is selected but idle. If the CE# is
deasserted, the flash enters its standby mode,
where current consumption is even lower. The
combination of these features can minimize
memory power consumption, and therefore, overall
system power consumption.
3.6.1
ACTIVE POWER
(Program/Erase/Read)
With CE# at a logic-ow level and RP# at a logic-
high level, the device is in the active mode. Refer to
the DC Characteristic tables for I
CC
current values.
Active power is the largest contributor to overall
system power consumption. Minimizing the active
current could have a profound effect on system
power consumption, especially for battery-operated
devices.
3.6.2
AUTOMATIC POWER SAVINGS (APS)
Automatic Power Savings provides low-power
operation during read mode. After data is read from
the memory array and the address lines are
quiescent, APS circuitry places the device in a
mode where typical current is comparable to I
CCS
.
The flash stays in this static state with outputs valid
until a new location is read.
3.6.3
STANDBY POWER
When CE# is at a logic-high level (V
IH
) and the
device is in read mode, the flash memory is in
standby mode, which disables much of the device’s
circuitry
and
substantially
consumption. Outputs are placed in a high
-
impedance state independent of the status of the
OE# signal. If CE# transitions to a logic
-
high level
during erase or program operations, the device will
continue to perform the operation and consume
corresponding active power until the operation is
completed.
reduces
power
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F800C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 28F160C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 28F320D18 | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器) |
| 28F320J5 | 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器) |
| 28F640J5 | 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320J3D75 | 制造商:undefined 功能描述: |
| 28F320J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 28F320J5_02 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
| 28F320S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| 28F320S5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
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