參數(shù)資料
型號(hào): 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁數(shù): 27/59頁
文件大?。?/td> 321K
代理商: 28F320C3
E
4.4
28F800C3, 28F160C3, 28F320C3
27
PRELIMINARY
DC Characteristics,
Continued
V
CC
2.7 V
–3.6 V
V
CCQ
2.7 V–3.6 V
Sym
Parameter
Note
Typ
Max
Unit
Test Conditions
I
CCWS
V
CC
Program Suspend
Current
1,2,4
10
25
μA
CE# = V
IH
, Program
Suspend in Progress
I
PPD
V
Deep Power-Down
Current
1
0.2
5
μA
RP# = GND ± 0.2 V
V
PP
V
CC
I
PPS
V
PP
Standby Current
1
0.2
5
μA
V
PP
V
CC
I
PPR
V
PP
Read Current
1
2
±
15
μA
V
PP
V
CC
1,4
50
200
μA
V
PP
V
CC
V
PP
=V
PP1
Program in Progress
I
PPW
V
PP
Program Current
1,4
0.05
0.1
mA
8
22
mA
V
PP
=
V
PP2
(12 V)
Program in Progress
I
PPE
V
PP
Erase Current
1,4
0.05
0.1
mA
V
PP
= V
PP1
Program in Progress
8
22
mA
V
PP
=
V
PP2
(12 V)
Program in Progress
I
PPES
V
PP
Erase Suspend Current
1,4
0.2
5
μA
V
PP
= V
PP1
Erase Suspend in Progress
50
200
μA
V
= V
PP2
(12 V)
Erase Suspend in Progress
I
PPWS
V
PP
Program Suspend Current
1,4
0.2
5
μA
V
PP
= V
PP1
Program Suspend in
Progress
50
200
μA
V
= V
PP2
(12 V)
Program Suspend in
Progress
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
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