參數(shù)資料
型號(hào): 28F320C3
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 32M X 8 FLASH 3V PROM
文件頁數(shù): 3/59頁
文件大?。?/td> 321K
代理商: 28F320C3
E
28F800C3, 28F160C3, 28F320C3
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION..............................................5
1.1 3 Volt Advanced+ Boot Block Flash Memory
Enhancements ............................................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts ..........................................6
2.2 Block Organization.....................................10
2.2.1 Parameter Blocks ................................10
2.2.2 Main Blocks.........................................10
3.0 PRINCIPLES OF OPERATION .....................11
3.1 Bus Operation............................................11
3.1.1 Read....................................................11
3.1.2 Output Disable.....................................11
3.1.3 Standby...............................................11
3.1.4 Reset...................................................12
3.1.5 Write....................................................12
3.2 Modes of Operation....................................12
3.2.1 Read Array ..........................................12
3.2.2 Read Configuration..............................13
3.2.3 Read Status Register...........................13
3.2.3.1 Clearing the Status Register .........13
3.2.4 Read Query.........................................13
3.2.5 Program Mode.....................................14
3.2.5.1 Suspending and Resuming
Program.......................................14
3.2.6 Erase Mode.........................................14
3.2.6.1 Suspending and Resuming Erase.15
3.3 Flexible Block Locking................................19
3.3.1 Locking Operation ...............................19
3.3.2 Locked State .......................................19
3.3.3 Unlocked State....................................19
3.3.4 Lock-Down State.................................19
3.3.5 Reading a Block’s Lock Status ............20
3.3.6 Locking Operations during Erase
Suspend.............................................20
3.3.7 Status Register Error Checking ...........20
3.4 128-Bit Protection Register........................ 21
3.4.1 Reading the Protection Register ......... 21
3.4.2 Programming the Protection Register . 21
3.4.3 Locking the Protection Register .......... 22
3.5 V
PP
Program and Erase Voltages.............. 22
3.5.1 Improved 12 V Production
Programming..................................... 22
3.5.2 V
PP
V
PPLK
for Complete Protection .. 22
3.6 Power Consumption.................................. 23
3.6.1 Active Power (Program/Erase/Read) .. 23
3.6.2 Automatic Power Savings (APS)......... 23
3.6.3 Standby Power ................................... 23
3.6.4 Deep Power-Down Mode.................... 24
3.7 Power-Up/Down Operation........................ 24
3.7.1 RP# Connected to System Reset ....... 24
3.7.2 V
CC
, V
PP
and RP# Transitions ............ 24
3.8 Power Supply Decoupling.......................... 24
4.0 ELECTRICAL SPECIFICATIONS............... 25
4.1 Absolute Maximum Ratings....................... 25
4.2 Operating Conditions................................. 25
4.3 Capacitance .............................................. 26
4.4 DC Characteristics..................................... 26
4.5 AC Characteristics—Read Operations—
Extended Temperature............................. 30
4.6 AC Characteristics—Write Operations—
Extended Temperature............................. 33
4.7 Erase and Program Timings...................... 35
4.8 Reset Operations....................................... 37
5.0 ORDERING INFORMATION......................... 38
6.0 ADDITIONAL INFORMATION...................... 39
APPENDIX A: WSM Current/Next States ......... 40
APPENDIX B: Program/Erase Flowcharts....... 42
APPENDIX C: Common Flash Interface Query
Structure..................................................... 48
相關(guān)PDF資料
PDF描述
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲(chǔ)器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J5 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F320S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY