參數(shù)資料
型號(hào)： 28F3204W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無(wú)線閃存的3伏的I / O和SRAM（寬30）
文件頁(yè)數(shù)： 76/82頁(yè)
文件大小： 749K
代理商： 28F3204W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
70
Preliminary
C.4
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table C5. CFI Identification
Table C6. System Interface Information
Offset
Length
Description
Add.
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
Hex
Code Value
--51
--52
--59
--03
--00
--39
--00
--00
--00
--00
--00
10h
3
Query-unique ASCII string
“
QRY
“
"Q"
"R"
"Y"
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
15h
2
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
19h
2
Offset
Length
Description
Add.
1B:
Hex
Code Value
--17
1Bh
1
1.7V
1Ch
1
1C:
--19
1.9V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
“
n
”
such that typical single word program time-out = 2
n
μ-sec
“
n
”
such that typical max. buffer write time-out = 2
n
μ-sec
“
n
”
such that typical block erase time-out = 2
n
m-sec
“
n
”
such that typical full chip erase time-out = 2
n
m-sec
“
n
”
such that maximum word program time-out = 2
n
times typical
“
n
”
such that maximum buffer write time-out = 2
n
times typical
“
n
”
such that maximum block erase time-out = 2
n
times typical
“
n
”
such that maximum chip erase time-out = 2
n
times typical
1F:
20:
21:
22:
23:
24:
25:
26:
--04
--00
--0A
--00
--04
--00
--03
--00
16μs
NA
1s
NA
256μs
NA
8s
NA
V
PP
[programming] supply minimum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 HEX volts
V
PP
[programming] supply maximum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 HEX volts
V
CC
logic supply minimum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 BCD volts
V
CC
logic supply maximum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 BCD volts
相關(guān)PDF資料
PDF描述
28F320W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F6408W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
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