參數(shù)資料
型號: 28F3204W30
廠商: Intel Corp.
元件分類: DRAM
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: 1.8伏英特爾無線閃存的3伏的I / O和SRAM(寬30)
文件頁數(shù): 62/82頁
文件大?。?/td> 749K
代理商: 28F3204W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
56
Preliminary
13.3
SRAM Data Retention Operation
NOTES:
1. Typical values at nominal S-V
CC
, T
= +25
°
C.
2. S-CS
1
# > S-V
CC
0.2 V, S-CS
2
> S-V
CC
0.2 V (S-CS
1
# controlled) or S-CS
2
< 0.2 V (S-CS
2
controlled).
Figure 26. AC Waveform: SRAM Write Operation
Sym
Parameter
Device
Note
Min
Typ
Max
Unit
Test Conditions
V
DR
S-V
CC
for Data Retention
4/8-
Mbit
1, 2
1.5
3.3
V
S-CS
1
#
S-V
CC
0.2 V
I
DR
Data Retention Current
4-Mbit
1, 2
5
μA
S-VCC = 1.5 V
S-CS
1
#
S-V
CC
0.2 V
8-Mbit
25
t
SDR
Data Retention Setup
Time
4/8-
Mbit
1
0
ns
See Data Retention
Waveform
t
RDR
Recovery Time
4/8-
Mbit
1
t
RC
ns
High Z
Data In
Address Stable
Device
Address Selection
Standby
ADDRESSES (A)
V
IH
V
IL
V
IH
V
IL
CS
1
# (E
1
)
V
IH
V
IL
V
OH
V
OL
V
IH
OE# (G)
WE# (W)
DATA (D/Q)
UB#, LB#
High Z
V
IH
V
IL
V
IH
W1
W8
CS
2
(E
2
)
V
IL
V
IH
W9
W6
W5
W2
W3
W4
W7
相關(guān)PDF資料
PDF描述
28F320W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F6408W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory