- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F3204W30 (Intel Corp.) 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) PDF資料下載
參數(shù)資料
| 型號： | 28F3204W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 75/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F3204W30 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁當(dāng)前第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
69
C.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or
“
database.
”
The structure subsections and address locations are summarized
below.
Table C3. Query Structure
Offset
00000h
00001h
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2. BA = Block Address beginning location (i.e., 08000h is block 1
’
s beginning location when the block size is
32K-word).
3. Offset 15 defines
“
P
”
which points to the Primary Intel-specific Extended Query Table.
C.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully or whether
a given block is locked or can be accessed for flash program/erase operations.
Block Erase Status (BSR.1) allows system software to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to verify that the V
CC
supply was not
accidentally removed during an erase operation. Only issuing another operation to the block resets
this bit. The Block Status Register is accessed from word address 02h within each block.
Table C4. Block Status Register
Offset
(BA+2)h
(1)
NOTE:
BA = The beginning location of a Block Address (i.e., 008000h is block 1
’
s (64KB block) beginning
location in word mode).
Sub-Section Name
(1)
Manufacturer Code
Device Code
Block-specific information
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing & voltage information
Flash device layout
Vendor-defined additional information specific
to the Primary Vendor Algorithm
(2)
Block Status register
Reserved
CFI query identification string
System interface information
Device geometry definition
00004-Fh
00010h
0001Bh
00027h
P
(3)
Primary Intel-specific Extended Query Table
Length
1
Description
Add.
BA+2
BA+2 (bit 0): 0 or 1
Value
--00 or --01
Block Lock Status Register
BSR.0 Block lock status
0 = Unlocked
1 = Locked
BSR.1 Block lock-down status
0 = Not locked down
1 = Locked down
BSR 2
–
7: Reserved for future use
BA+2 (bit 1): 0 or 1
BA+2
(bit 2
–
7): 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F320W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F6408W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F640W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F640P3 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F320C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| 28F320J3D75 | 制造商:undefined 功能描述: |
| 28F320J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 28F320J5_02 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。