- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F3204W30 (Intel Corp.) 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) PDF資料下載
參數(shù)資料
| 型號： | 28F3204W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 34/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F3204W30 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當(dāng)前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
28
Preliminary
To erase a block, execute the Block Erase command. To determine the status of a block erase, poll
the status register and analyze the bits.
If the device is put in standby mode during an erase operation, the device will continue to erase
until to operation is complete; then it will enter standby mode.
Refer to
Figure 33,
“
Block Erase Flowchart
”
on page 64
for a detailed flow on how to implement a
block erase operation.
6.2
Erase Protection (V
PP
< V
PPLK
)
If the V
PP
voltage is below the V
PP
lockout threshold voltage, block erasure is prohibited. To
ensure proper block erase operation, V
PP
must be set to one of the two valid V
PP
levels. To
determine block erase status, poll the status register and analyze the bits.
When V
PP
is at V
PP1
, erase currents are drawn through the V
CC
supply. If V
PP
is driven by a logic
signal, V
PP1
must remain above the V
PP1
minimum value in order to erase a block.
7.0
Flash Suspend/Resume Modes
7.1
Program/Erase Suspend
To suspend program or erase, execute the suspend command. Suspend halts any in
-
progress word
programming or block erase operation. The Suspend command can be written to any device
address, and the partition being addressed remains in its previous command state. A Suspend
command allows data to be accessed from any memory location other than those suspended.
A program operation can be suspended to allow a read. An erase operation can be suspended to
allow word programming or device reads within any except the suspended block. A program
operation nested within an erase suspend can be suspended to read the flash device. Once the
program/erase process starts, a suspend can only occur at certain points in the program/erase
algorithm. Erase cannot resume until program operations initiated during the erase suspend are
complete. All device read functions are permitted during suspend.
During a suspend, V
PP
must remain at a valid program level and WP# must not change. Also, a
minimum time is required between issuing a Program or Erase command and then issuing a
Suspend command.
7.2
Program/Erase Resume
The Resume command (D0H) instructs the WSM to continue programming/erasing and
automatically clears status register bits SR.2 (or SR.6) and SR.7. The Resume command can be
written to any partition. If status register error bits are set, the status register can be cleared before
issuing the next instruction. RST# must remain at V
IH
. See
Figure 31,
“
Program Suspend/Resume
Flowchart
”
on page 62
and
Figure 34,
“
Erase Suspend/Resume Flowchart
”
on page 65
.
If a suspended partition was placed in read array, read status register, read identifier (ID), or read
query mode during the suspend, the device will remain in that mode and output data corresponding
to that mode after the program or erase operation is resumed. After resuming a suspend operation,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F320W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F6408W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F640W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F640P3 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F320C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| 28F320J3D75 | 制造商:undefined 功能描述: |
| 28F320J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 28F320J5_02 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。