參數(shù)資料
型號： 28F3204W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30）
文件頁數(shù)： 27/82頁
文件大小： 749K
代理商： 28F3204W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
21
4.2.9
Burst Wrap (BW)
CR.3 sets the burst wrap. The burst wrap determines how the device will handle a burst-mode read
that crosses a 16-word row boundary. Wrap can be set to have either the burst mode wrap around to
the same row or have the burst read consecutive addresses.
Wrap applies to 4- and 8-word burst modes only. Wrap has no effect in continuous burst mode. In
4- and 8-word burst mode with wrap enabled, the WAIT signal will not be asserted. In 4- and 8-
word burst mode with wrap disabled, the WAIT signal will be asserted only if a 16-word row
boundary is crossed.
4.2.10
Burst Length (BL
2
–
0
)
CR.2
–
CR.0 sets the burst length. The burst length determines the maximum number of consecutive
words the device will output during a burst-mode read. 1.8 Volt Intel
Wireless Flash Memory with
3 Volt I/O supports 4-, 8- and continuous-word burst lengths.
4.3
Read Query Register
The query plane comes to the foreground and occupies a 4-Mbit address range at the partition
supplied by the Read Query command address. The mode outputs Common Flash Interface (CFI)
data when partition addresses are read.
Appendix C,
“
Common Flash Interface
”
on page 68
shows
query mode information and addresses. Issuing a Read Query command to a partition that is
programming or erasing places that partition
’
s outputs in read query mode while the partition
continues to program or erase in the background. The Read Query command is subject to read
restrictions dependent on the parameter partition availability. Refer to
Table 15,
“
Simultaneous
Operations Allowed with the Protection Register
”
on page 32
for details.
4.4
Read ID Register
The Identification (ID) Register contains various product information, such as manufacturer ID,
device ID, block lock status, protection register information, and configuration register settings. To
obtain any information from the ID register, execute the Read ID Register command. Information
contained in this register can only be accessed by executing a single-word asynchronous read.
Table 11. Device Identification Codes
Item
Address
(1,2,3)
Data
Manufacturer Code
PBA + 000000h
0089h
8852h
8853h
8854h
8855h
8856h
8857h
Device Code:
32 Mbit
- T
- B
- T
- B
- T
- B
PBA + 000001h
64 Mbit
PBA + 000001h
128 Mbit
PBA + 000001h
Block Lock Configuration
(4)
Block Is Unlocked
Block Is Locked
Block Is Not Locked-Down
Block Is Locked-Down
MBBA + 000002h
or
PBBA + 000002h,
depends on block
DQ
0
= 0
DQ
0
= 1
DQ
1
= 0
DQ
1
= 1
相關(guān)PDF資料
PDF描述
28F320W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F6408W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
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