- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄4208 > XCV812E-6FG900C (Xilinx Inc)IC FPGA 1.8V C-TEMP 900-FBGA PDF資料下載
參數(shù)資料
| 型號： | XCV812E-6FG900C |
| 廠商： | Xilinx Inc |
| 文件頁數(shù)： | 72/118頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FPGA 1.8V C-TEMP 900-FBGA |
| 產(chǎn)品變化通告： | FPGA Family Discontinuation 18/Apr/2011 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | Virtex®-E EM |
| LAB/CLB數(shù)： | 4704 |
| 邏輯元件/單元數(shù)： | 21168 |
| RAM 位總計： | 1146880 |
| 輸入/輸出數(shù)： | 556 |
| 門數(shù)： | 254016 |
| 電源電壓： | 1.71 V ~ 1.89 V |
| 安裝類型： | 表面貼裝 |
| 工作溫度： | 0°C ~ 85°C |
| 封裝/外殼： | 900-BBGA |
| 供應(yīng)商設(shè)備封裝： | 900-FBGA |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁當(dāng)前第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁
DS025-3 (v3.0) March 21, 2014
Module 3 of 4
1
2000-2014 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm.
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.
— OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE —
Virtex-E Extended Memory Electrical Characteristics
Definition of Terms
Electrical and switching characteristics are specified on a
per-speed-grade basis and can be designated as Advance,
Preliminary, or Production. Each designation is defined as
follows:
Advance: These speed files are based on simulations only
and are typically available soon after device design specifi-
cations are frozen. Although speed grades with this desig-
nation are considered relatively stable and conservative,
some under-reporting might still occur.
Preliminary: These speed files are based on complete ES
(engineering sample) silicon characterization. Devices and
speed grades with this designation are intended to give a
better indication of the expected performance of production
silicon. The probability of under-reporting delays is greatly
reduced as compared to Advance data.
Production: These speed files are released once enough
production silicon of a particular device family member has
been characterized to provide full correlation between
speed files and devices over numerous production lots.
There is no under-reporting of delays, and customers
receive formal notification of any subsequent changes. Typ-
ically, the slowest speed grades transition to Production
before faster speed grades.
All specifications are representative of worst-case supply
voltage and junction temperature conditions. The parame-
ters included are common to popular designs and typical
applications. Contact the factory for design considerations
requiring more detailed information.
Table 1 correlates the current status of each Virtex-E
Extended Memory device with a corresponding speed file
designation.
All specifications are subject to change without notice.
DC Characteristics
Absolute Maximum Ratings
0
Virtex-E 1.8 V Extended Memory
Field Programmable Gate Arrays
DS025-3 (v3.0) March 21, 2014
00
Production Product Specification
R
Table 1: Virtex-E Extended Memory Device
Speed Grade Designations
Device
Speed Grade Designations
Advance
Preliminary
Production
XCV405E
–8, –7, –6
XCV812E
–8, –7, –6
Symbol
Description(1)
Units
VCCINT
Internal Supply voltage relative to GND
–0.5 to 2.0
V
VCCO
Supply voltage relative to GND
–0.5 to 4.0
V
VREF
Input Reference Voltage
–0.5 to 4.0
V
VIN (3)
Input voltage relative to GND
–0.5 to VCCO +0.5
V
VTS
Voltage applied to 3-state output
–0.5 to 4.0
V
VCC
Longest Supply Voltage Rise Time from 0 V – 1.71 V
50
ms
TSTG
Storage temperature (ambient)
–65 to +150
°C
TJ
Junction temperature (2)
Plastic packages
+125
°C
Notes:
1.
Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time can affect device reliability.
2.
For soldering guidelines and thermal considerations, see the device packaging information on www.xilinx.com.
3.
Inputs configured as PCI are fully PCI compliant. This statement takes precedence over any specification that would imply that the
device is not PCI compliant.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RCB106DHAR-S621 | EDGECARD 212POS DIP R/A .050 SLD |
| XC6VLX240T-1FFG1759C | IC FPGA VIRTEX 6 241K 1759FFGBGA |
| ACC65DRXN | CONN EDGECARD 130PS .100 DIP SLD |
| RMC65DRYI-S734 | CONN EDGECARD 130PS DIP .100 SLD |
| XC4VSX55-10FF1148I | IC FPGA VIRTEX-4SX 1148FFBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XCV812E-6FG900I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG404C | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG404I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG556C | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG556I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。