參數(shù)資料
型號: WED9LC6416V1612BC
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA153
封裝: MO-163, BGA-153
文件頁數(shù): 3/27頁
文件大?。?/td> 370K
代理商: WED9LC6416V1612BC
11
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6416V
January 20001
L
OP Code
Mode Register Set
Set the Mode Register
1
L
H
X
Auto or Self Refresh
Start Auto
1
L
H
L
X
Precharge
No Operation
L
H
BA
Row Address
Bank Activate
Activate the specified bank and row
Idle
L
H
L
BA
Column
Write w/o Precharge
ILLEGAL
2
L
H
L
H
BA
Column
Read w/o Precharge
ILLEGAL
1
L
H
L
X
Burst Termination
No Operation
1
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
3
L
H
BA
Row Address
Bank Activate
ILLEGAL
1
Row Active
L
H
L
BA
Column
Write
Start Write; Determine if Auto Precharge
4,5
L
H
L
H
BA
Column
Read
Start Read; Determine if Auto Precharge
4,5
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Read
L
H
L
BA
Column
Write
Terminate Burst; Start the Write cycle
5,6
L
H
L
H
BA
Column
Read
Terminate Burst; Start a new Read cycle
5,6
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Write
L
H
L
BA
Column
Write
Terminate Burst; Start a new Write cycle
5,6
L
H
L
H
BA
Column
Read
Terminate Burst; Start the Read cycle
5,6
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
Read with
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Auto Precharge
L
H
L
BA
Column
Write
ILLEGAL
L
H
L
H
BA
Column
Read
ILLEGAL
L
H
L
X
Burst Termination
ILLEGAL
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
SDRAM CURRENT STATE TRUTH TABLE
Current State
Command
Action
Notes
SDCE
SDRAS
SDCAS
SDWE
(BA)
A11-A0
Description
A12 & A13
相關PDF資料
PDF描述
WMS512K8-100DEIEA 512K X 8 STANDARD SRAM, 100 ns, CDSO32
WMS512K8-70DEME 512K X 8 STANDARD SRAM, 70 ns, CDSO32
WSF512K32-29G2TI SPECIALTY MEMORY CIRCUIT, CQFP68
WF2M32B-150G2UI5A 8M X 8 FLASH 5V PROM MODULE, 150 ns, CQFP68
W7NCF01GH11CS6DG 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
相關代理商/技術參數(shù)
參數(shù)描述
WED9LC6416V1612BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V2010BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V2010BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V2012BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V2012BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM