參數(shù)資料
型號(hào): WED9LC6416V1612BC
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA153
封裝: MO-163, BGA-153
文件頁(yè)數(shù): 16/27頁(yè)
文件大小: 370K
代理商: WED9LC6416V1612BC
23
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6416V
January 20001
FIG. 14 SDRAM WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST STOP @
BURST LENGTH = FULL PAGE
CAb
CAa
RAa
DQ
Precharge
(A-Bank)
Write
(A-Bank)
Burst Stop
Write
(A-Bank)
Row Active
(A-Bank)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
DON’T CARE
RAa
DAa0
DAa1
DAa2
DAa3
DAa4
DAb1
DAb0
DAb3
DAb2
DAb5
DAb4
Note 2
tRDL
tBDL
SDRAS
SDCAS
ADDR
BA
BWE
SDA10
SDCLK
SDCE
SDWE
NOTES:
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL.
BWE at write interrupt by precharge command is needed to prevent invalid write.
BWE should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked
internally.
3. Burst stop is valid at every burst length.
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