參數(shù)資料
型號: W942516BH
英文描述: DRAM
中文描述: 內(nèi)存
文件頁數(shù): 8/45頁
文件大?。?/td> 1601K
代理商: W942516BH
W942508BH
- 8 -
9. CAPACITANCE
(V
DD
= V
DDQ
= 2.5V
±
0.2V, f = 1 MHz, T
A
= 25
°
C, V
OUT (DC)
= V
DDQ
/2, V
OUT
(Peak to Peak) = 0.2V)
SYMBOL
PARAMETER
MIN.
MAX.
DELTA
(MAX.)
UNIT
C
IN
Input Capacitance (except for CLK pins)
2.0
3.0
0.5
pF
C
CLK
Input Capacitance (CLK pins)
2.0
3.0
0.25
pF
C
I/O
DQ, DQS, DM Capacitance
4.0
5.0
0.5
pF
C
NC1
NC1 Pin Capacitance
-
1.5
-
pF
C
NC2
NC2 Pin Capacitance
4.0
5.0
-
pF
Notes: These parameters are periodically sampled and not 100% tested.
The NC2 pins have additional capacitance for adjustment of the adjacent pin capacitance.
The NC2 pins have Power and Ground clamp.
10. LEAKAGE AND OUTPUT BUFFER CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
NOTES
I
I(L)
Input Leakage Current
(0V < V
IN
< V
DDQ
, All other pins not under test = 0V)
-2
2
μ
A
I
O(L)
Output Leakage Current
(Output disabled, 0V < V
OUT
< V
DDQ
)
-5
5
μ
A
V
OH
Output High Voltage
(under AC test load condition)
Output Low Voltage
(under AC test load condition)
Output Minimum Source DC Current
V
TT
+0.76
-
V
V
OL
-
V
TT
-0.76
V
I
OH (DC)
-15.2
-
mA
4, 6
I
OL (DC)
Output Minimum Sink DC Current
Full Strength
15.2
-
mA
4, 6
I
OH (DC)
Output Minimum Source DC Current
-10.4
-
mA
5
I
OL (DC)
Output Minimum Sink DC Current
Half
Strength
10.4
-
mA
5
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