參數(shù)資料
型號(hào): W942516BH
英文描述: DRAM
中文描述: 內(nèi)存
文件頁(yè)數(shù): 25/45頁(yè)
文件大?。?/td> 1601K
代理商: W942516BH
W942508BH
Publication Release Date: March 19, 2002
- 25 -
Revision A1
Address Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n + 1
not carried from A0 to A1
Data 2
n + 2
4 words (address bit A0, A1)
Data 3
n + 3
Not carried from A1 to A2
Data 4
n + 4
Data 5
n + 5
8 words (address bits A2, A1 and A0)
Data 6
n + 6
Not carried from A2 to A3
Data 7
n + 7
Addressing Sequence of Interleave Mode
A Column access is started from the inputted column address and is performed by
interleaving the address bits in the sequence shown as the following.
Address Sequence for Interleave Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
4 words
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
8 words
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
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