參數(shù)資料
型號(hào)： W942516BH
英文描述： DRAM
中文描述： 內(nèi)存
文件頁(yè)數(shù)： 1/45頁(yè)
文件大?。?/td> 1601K
代理商： W942516BH
W942508BH
8M
′
4 BANKS
′
8 BIT DDR SDRAM
Publication Release Date: March 19, 2002
- 1 -
Revision A1
Table of Contents-
1. GENERAL DESCRIPTION..................................................................................................................3
2. FEATURES..........................................................................................................................................3
3. KEY PARAMETERS............................................................................................................................3
4. PIN CONFIGURATION........................................................................................................................4
5. PIN DESCRIPTION .............................................................................................................................5
6. BLOCK DIAGRAM...............................................................................................................................6
7. ABSOLUTE MAXIMUM RATINGS ......................................................................................................7
8. RECOMMENDED DC OPERATING CONDITIONS............................................................................7
9. CAPACITANCE ...................................................................................................................................8
10. LEAKAGE AND OUTPUT BUFFER CHARACTERISTICS...............................................................8
11. DC CHARACTERISTICS...................................................................................................................9
12. AC CHARACTERISTICS AND OPERATING CONDITION.............................................................10
13. AC TEST CONDITIONS..................................................................................................................11
14. OPERATION MODE........................................................................................................................13
Simplified Truth Table............................................................................................................................ 13
Function Truth Table ............................................................................................................................. 14
Function Truth Table for CKE................................................................................................................ 17
15. SIMPLIFIED STATE DIAGRAM ......................................................................................................18
16. FUNCTIONAL DESCRIPTION ........................................................................................................19
Power Up Sequence.............................................................................................................................. 19
Command Function ............................................................................................................................... 19
Read Operation ..................................................................................................................................... 22
Write Operation ..................................................................................................................................... 22
Precharge.............................................................................................................................................. 22
Burst Termination .................................................................................................................................. 23
Refresh Operation ................................................................................................................................. 23
Power Down Mode ................................................................................................................................ 23
Mode Register Operation ...................................................................................................................... 23
17. TIMING WAVEFORMS....................................................................................................................27
Command Input Timing ......................................................................................................................... 27
Timing of the CLK Signals..................................................................................................................... 27
Read Timing (Burst Length = 4) ............................................................................................................ 28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W942516CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT DDR SDRAM
W9425G6DH 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM
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W9425G6EH_0812 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM
W9425G6EH-5 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
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