參數(shù)資料
型號： W19B320BTT-H
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： TSOP-48
文件頁數(shù)： 45/56頁
文件大小： 0K
代理商： W19B320BTT-H
W19B320BT/B DATASHEET
Publication Release Date:Dec. 25, 2007
- 5 -
Revisionv A3
2. FEATURES
Performance
2.7~3.6-volt write (program and erase) operations
Fast write operation
Sector erases time: 0.4 Sec (typical)
Chip erases time: 30Sec (typical)
Byte/Word programming time: 7/9 　s (typical)
Read access time: 70 ns
Typical program/erase cycles: 100K
Twenty-year data retention
Ultra low power consumption
Active current (Read): 10 mA (typical)
Active current (Read while Erase): 21 mA (typical)
Standby current: 0.2 μA (typical)
Architecture
Sector erase architecture
Eight 8KB, and sixty-three 64KB sectors
Top or bottom boot block configurations available
Supports full chip erase
Security Sector Size: 256 Bytes
The Security Sector is an OTP; once the sector is programmed, it cannot be erased
JEDEC standard byte-wide and word-wide pinouts
Manufactured on WinStack 0.13
μm process technology
Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)
Software Features
Compatible with common Flash Memory Interface (CFI) specification
Flash device parameters stored directly on the device
Allows software driver to identify and use a variety of different current and future Flash products
Erase Suspend/Erase Resume
Suspends erase operations to allow programming in same bank
End of program detection
Software method: Toggle bit/Data polling
Unlock Bypass Program command
Reduces overall programming time when issuing multiple program command sequences
相關PDF資料
PDF描述
W24010T-70LL 128K X 8 STANDARD SRAM, 70 ns, PDSO32
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