47
μ
PD75048
SUBSYSTEM CLOCK OSCILLATOR CIRCUIT CHARACTERISTICS
(T
a
= -10 to +70
°
C, V
DD
= 2.7 to 6.0 V)
Oscillator
Recommended
Constants
Item
Conditions
MIN.
TYP.
MAX.
Unit
Crystal
Oscillation
frequency (f
XT
)*
1
Oscillation stabiliza- V
DD
= 4.5 to 6.0 V
tion time*
2
32
32.768
35
kHz
1.0
2
ms
10
ms
External Clock
XT1 input frequency
(f
XT
)*
1
XT1 input high-,
low-level widths
(t
XTH
, t
XTL
)
32
100
kHz
5
15
μ
s
*1: Indicates only the characteristics of the oscillator circuit. For instruction execution time, refer to
AC Characteristics.
2: Time required for oscillation to stabilize after V
DD
has reached the minimum value of the oscillation
voltage range.
Note
: When using the oscillation circuit of the subsystem clock, wire the portion enclosed in dotted
line in the figures as follows to avoid adverse influences on the wiring capacity:
Keep the wiring length as short as possible.
Do not cross the wiring over the other signal lines.
Do not route the wiring in the vicinity of lines through which a high alternating current flows.
Always keep the ground point of the capacitor of the oscillator circuit at the same potential
as V
DD
. Do not connect the ground pattern through which a high current flows.
Do not extract signals from the oscillation circuit.
The amplification factor of the subsystem clock oscillation circuit is designed to be low to reduce
the current dissipation and therefore, the subsystem clock oscillation circuit is influenced by
noise more easily than the main system clock oscillation circuit. When using the subsystem
clock, therefore, exercise utmost care in wiring the circuit.
XT1
XT2
R
C3
C4
V
DD
XT1
XT2
#