參數(shù)資料
型號: UM_S3C49F9X
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: S3C49F9X User’s Manual
中文描述: S3C49F9X用戶手冊
文件頁數(shù): 31/74頁
文件大?。?/td> 653K
代理商: UM_S3C49F9X
S3C49F9X SOLID DISK CONTROLLER CARD CONFIGURATION
30
4.1 Attribute Memory Function
Attribute memory is a space where PC Card identification and configuration information are stored, and is
limited to 8-bit wide accesses only at even addresses. The card configuration registers are also located
here. For the attribute memory read function, signals -REG and -OE must be active and -WE inactive
during the cycle. As in the main memory read functions, the signals -CE1 and -CE2 control the even-byte
and odd-byte address, but only the even-byte data is valid during the attribute memory access. Refer to
table 4-3 below for signal states and bus validity for the attribute memory function.
Table 4-3 Attribute Memory Function
Function Mode
-REG -CE2 -CE1
×
H
L
H
A9
×
L
A0
×
L
-OE
×
L
-WE
×
H
D15-D8
D7-D0
Standby Mode
H
High Z
High Z
Read Byte Access
CIS (8 bits)
L
High Z
Even Byte
Write Byte Access
CIS (8 bits) (invalid)
L
H
L
L
L
H
L
Don't Care
Even Byte
Read Byte Access
Configuration (8 bits)
L
H
L
H
L
L
H
High Z
Even Byte
Write Byte Access
Configuration (8 bits)
L
H
L
H
L
H
L
Don't Care
Even Byte
Read Word Access
CIS (16 bits)
L
L
L
L
×
L
H
Not Valid
Even Byte
Write Word Access
CIS (16 bits) (invalid)
L
L
L
L
×
H
L
Don't Care
Even Byte
Read Word Access
Configuration (16 bits)
L
L
L
H
×
L
H
Not Valid
Even Byte
Write Word Access
Configuration (16 bits)
L
L
L
H
×
H
L
Don't Care
Even Byte
Note
The -CE signal or both the -OE signal and the -WE signal must be de-asserted between consecutive cycle
operations.
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