參數(shù)資料
型號： TPS28225DT
廠商： Texas Instruments, Inc.
英文描述： High-Frequency 4-A Sink Synchronous MOSFET Driver
中文描述： 高頻率的4 - A水槽同步MOSFET驅(qū)動器
文件頁數(shù)： 6/30頁
文件大?。?/td> 951K
代理商： TPS28225DT
www.ti.com
ELECTRICAL CHARACTERISTICS
(1)
V
DD
= 7.2 V, EN/PG pulled up to V
DD
by 100-k
resistor, T
A
= T
J
= –40
°
C to 125
°
C (unless otherwise noted)
TPS28225
SLUS710–MAY 2006
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
UNDER VOLTAGE LOCKOUT
Rising threshold
Falling threshold
Hysteresis
BIAS CURRENTS
I
DD(off)
Bias supply current
I
DD
Bias supply current
INPUT (PWM)
V
PWM
= 0 V
V
PWM
= 0 V
3.2
2.7
3.5
3.0
0.5
3.8
V
V
EN/PG
= low, PWM pin floating
V
EN/PG
= high, PWM pin floating
350
500
μ
A
V
PWM
= 5 V
V
PWM
= 0 V
185
–200
1.0
3.8
250
30
I
PWM
Input current
μ
A
PWM 3-state rising threshold
(2)
PWM 3-state falling threshold
3-state shutdown Hold-off time
PWM minimum pulse to force U
GATE
pulse
ENABLE/POWER GOOD (EN/PG)
Enable high rising threshold
Enable low falling threshold
Hysteresis
Power good output
UPPER GATE DRIVER OUTPUT (UGATE)
Source resistance
Source current
(2)
t
RU
Rise time
Sink resistance
Sink current
(2)
t
FU
Fall time
LOWER GATE DRIVER OUTPUT (LGATE)
Source resistance
Source current
(2)
t
RL
Rise time
(2)
Sink resistance
Sink current
(2)
Fall time
(2)
SWITCHING TIME
t
DLU
UGATE turn-off propagation Delay
t
DLL
LGATE turn-off propagation Delay
t
DTU
Dead time LGATE turn-off to UGATE turn-on
t
DTL
Dead time UGATE turn-off to LGATE turn-on
BOOTSTRAP DIODE
V
F
Forward voltage
THERMAL SHUTDOWN
Rising threshold
(2)
Falling threshold
(2)
Hysteresis
V
V
PWM
PEAK = 5 V
3.4
4.0
t
HLD_R
T
MIN
ns
C
L
= 3 nF at U
GATE
, V
PWM
= 5 V
PG FET OFF
PG FET OFF
1.7
1.0
0.70
2.1
0.8
0.35
V
V
DD
= 2.5 V
0.2
500 mA source current
V
UGATE-PHASE
= 2.5 V
C
L
= 3 nF
500 mA sink current
V
UGATE-PHASE
= 2.5 V
C
L
= 3 nF
1.0
2.0
10
1.0
2.0
10
2.0
A
ns
A
ns
2.0
500 mA source current
V
LGATE
= 2.5 V
C
L
= 3 nF
500 mA sink current
V
LGATE
= 2.5 V
C
L
= 3 nF
1.0
2.0
10
0.4
4.0
2.0
A
ns
A
ns
1.0
5
C
L
= 3 nF
C
L
= 3 nF
C
L
= 3 nF
C
L
= 3 nF
14
14
14
14
ns
Forward bias current 100 mA
1.0
V
150
130
160
140
20
170
150
°
C
(1)
(2)
Typical values for T
= 25°C
Not tested in production
6
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