參數(shù)資料
型號： TPS28225DT
廠商： Texas Instruments, Inc.
英文描述： High-Frequency 4-A Sink Synchronous MOSFET Driver
中文描述： 高頻率的4 - A水槽同步MOSFET驅(qū)動器
文件頁數(shù)： 16/30頁
文件大?。?/td> 951K
代理商： TPS28225DT
www.ti.com
TPS28225
SLUS710–MAY 2006
DETAILED DESCRIPTION (continued)
IMPORTANT NOTE:
Any external resistor between PWM input and GND with the value lower than 40k
can
interfere with the 3-state thresholds. If the driver is intended to operate in the 3-state mode, any resistor below
40k
at the PWM and GND should be avoided. A resistor lower than 3.5k
connected between the PWM and
GND completely disables the 3-state function. In such case, the 3-state window shrinks to zero and the lower
3-state threshold becomes the boundary between the UGATE staying low and LGATE being high and vice versa
depending on the PWM input signal applied. It is not necessary to use a resistor <3.5k
to avoid the 3-state
condition while using a controller that is 3-state capable. If the rise and fall time of the input PWM signal is
shorter than 250ns, then the driver never enter into the 3-state mode.
In the case where the low-side MOSFET of a buck converter stays on during shutdown, the 3-state feature can
be fused to avoid negative resonent voltage across the output capacitor. This feature also can be used during
start up with a pre-biased output in the case where pulling the output low during the startup is not allowed due to
system requirements. If the system controller does not have the 3-state feature and never goes into the
high-impedance state, then setting the EN/PG signal low will keep both gate drive outputs low and turn both low-
and high-side MOSFETs OFF during the shut down and start up with the pre-biased output.
The self-adjustable input circuit accepts wide range of input pulse amplitudes (2V up to 13.2V) allowing use of a
variety of controllers with different outputs including logic level. The wide PWM input voltage allows some
flexibility if the driver is used in secondary side synchronous rectifier circuit. The operation of the TPS28225 with
a 12-V input PWM pulse amplitude, and with V
DD
= 7.2V and V
DD
= 5V respectively is shown in
Figure 22
and
Figure 23
.
Figure 22. 12-V PWM Pulse at V
DD
= 7.2 V
Figure 23. 12-V PWM Pulse at V
DD
= 5 V
16
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相關代理商/技術參數(shù)
參數(shù)描述
TPS28225TDRBRQ1 功能描述:功率驅(qū)動器IC AC 8P Hi Fre 4A Sink Sync MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS28225TDRQ1 功能描述:IC MOSFET DVR SINK SYNC 4A 8SOIC 制造商:texas instruments 系列:* 零件狀態(tài):在售 標準包裝:1
TPS28226D 功能描述:功率驅(qū)動器IC Hi Fre 4A Sink Synch MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS28226DG4 功能描述:功率驅(qū)動器IC 8P Hi Freq 4A Sink Synch MOSFET Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS28226DR 功能描述:功率驅(qū)動器IC Hi Fre 4A Sink Synch MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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