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| 型號： | TPS28225DT |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | High-Frequency 4-A Sink Synchronous MOSFET Driver |
| 中文描述： | 高頻率的4 - A水槽同步MOSFET驅動器 |
| 文件頁數(shù)： | 20/30頁 |
| 文件大小： | 951K |
| 代理商： | TPS28225DT |
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Layout Recommendations
To improve the switching characteristicsand efficiency of a design, the following layout rules need to be followed.
Locate the driver as close as possible to the MOSFETs.
Locate the V
DD
and bootstrap capacitors as close as possible to the driver.
Pay special attention to the GND trace. Use the thermal pad of the DFN-8 package as the GND by
connecting it to the GND pin. The GND trace or pad from the driver goes directly to the source of the
MOSFET but should not include the high current path of the main current flowing through the drain and
source of the MOSFET.
Use a similar rule for the PHASE node as for the GND.
Use wide traces for UGATE and LGATE closely following the related PHASE and GND traces. Eighty to 100
mils width is preferable where possible.
Use at least 2 or more vias if the MOSFET driving trace needs to be routed from one layer to another. For
the GND the number of vias are determined not only by the parasitic inductance but also by the
requirements for the thermal pad.
Avoid PWM and enable traces going close to the PHASE node and pad where high dV/dT voltage can
induce significant noise into the relatively high impedance leads.
TPS28225
SLUS710–MAY 2006
APPLICATION INFORMATION (continued)
Turning Off of the MOSFET needs to be done as fast as possible to reduce switching losses. For this reason the
TPS28225 driver has very low output impedance specified as 0.4
typ for lower driver and 1
typ for upper
driver at dc current. Assuming 8-V drive voltage and no parasitic inductances, one can expect an initial sink
current amplitude of 20A and 8A respectively for the lower and upper drivers. With pure R-C discharge circuit for
the gate capacitor, the voltage and current waveforms are expected to be exponential. However, because of
parasitic inductances, the actual waveforms have some ringing and the peak current for the lower driver is about
4A and about 2.5A for the upper driver (
Figure 25
and
Figure 26
). The overall parasitic inductance for the lower
drive path is estimated as 4nH and for the upper drive path as 6nH. The internal parasitic inductance of the
driver, which includes inductances of bonded wires and package leads, can be estimated for SOIC-8 package
as 2nH for lower gate and 4nH for the upper gate. Use of DFN-8 package reduces the internal parasitic
inductances by approximately 50%.
It should be taken into account that poor layout can cause 3% to 5% less efficiency versus a good layout design
and can even decrease the reliability of the whole system.
Figure 27. One of Phases Driven by TPS28225 Driver in 4-phase VRM Reference Design
20
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| TPS28225TDRBRQ1 | 功能描述:功率驅動器IC AC 8P Hi Fre 4A Sink Sync MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS28225TDRQ1 | 功能描述:IC MOSFET DVR SINK SYNC 4A 8SOIC 制造商:texas instruments 系列:* 零件狀態(tài):在售 標準包裝:1 |
| TPS28226D | 功能描述:功率驅動器IC Hi Fre 4A Sink Synch MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS28226DG4 | 功能描述:功率驅動器IC 8P Hi Freq 4A Sink Synch MOSFET Drvr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS28226DR | 功能描述:功率驅動器IC Hi Fre 4A Sink Synch MOSFET Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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