參數(shù)資料
型號: TPS28225DT
廠商: Texas Instruments, Inc.
英文描述: High-Frequency 4-A Sink Synchronous MOSFET Driver
中文描述: 高頻率的4 - A水槽同步MOSFET驅(qū)動器
文件頁數(shù): 19/30頁
文件大小: 951K
代理商: TPS28225DT
www.ti.com
Voltage
Current
t Time ns
L
L
LGATE Current, A
Voltage
Current
t Time ns
U
U
UGATE Current, A
TPS28225
SLUS710–MAY 2006
APPLICATION INFORMATION (continued)
The I
current charges the gate capacitor and the I
current discharges it. The rise and fall time of
voltage across the gate defines how quickly the MOSFET can be switched. The timing parameters specified in
datasheet for both upper and lower driver are shown in
Figure 15
and
Figure 16
where 3-nF load capacitor has
been used for the characterization data. Based on these actual measurements, the analytical curves in
Figure 25
and
Figure 26
show the output voltage and current of upper and low side drivers during the
discharging of load capacitor. The left waveforms show the voltage and current as a function of time, while the
right waveforms show the relation between the voltage and current during fast switching. These waveforms
show the actual switching process and its limitations because of parasitic inductances. The static V
/ I
curves shown in many datasheets and specifications for the MOSFET drivers do not replicate actual switching
condition and provide limited information for the user.
Figure 25. LGATE Turning Off Voltage and Sink Current vs Time (Related Switching Diagram (right))
Figure 26. UGATE Turning Off Voltage and Sink Current vs Time (Related Switching Diagram (right)_
19
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