參數(shù)資料
型號(hào): STW34NB20
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
中文描述: N溝道增強(qiáng)模式PowerMESHTM MOSFET的(不適用溝道增強(qiáng)模式MOSFET的)
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 97K
代理商: STW34NB20
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may resultsfrom its use. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorizedfor useas criticalcomponents in life support devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A
. . .
8/8
STW34NB20
相關(guān)PDF資料
PDF描述
STW40NS15 N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
STW40N20 N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET
STW5NA90 N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOS晶體管)
STW5NB90 N-Channel 900V-2.3Ω-5.6A- TO-247 PowerMESHTM MOSFET(N溝道MOSFET)
STW81100AT MULTI-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW34NB20 制造商:STMicroelectronics 功能描述:MOSFET N TO-247
STW34NB20_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET
STW34NM60N 功能描述:MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW34NM60ND 功能描述:MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW35N60DM2 功能描述:MOSFET N-CH 600V 28A 制造商:stmicroelectronics 系列:MDmesh? DM2 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):600V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):28A(Tc) 不同?Id,Vgs 時(shí)的?Rds On(最大值):110 毫歐 @ 14A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):5V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):54nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):2400pF @ 100V 功率 - 最大值:210W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商器件封裝:TO-247 標(biāo)準(zhǔn)包裝:30