參數(shù)資料
型號(hào)： STW5NA90
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOS晶體管)
中文描述： N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管）
文件頁數(shù)： 1/6頁
文件大小： 54K
代理商： STW5NA90
STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 2.1
I
±
30 V GATE-TO-SOURCE VOLTAGE
RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
GATECHARGE MINIMISED
I
REDUCED THRESHOLD VOLTAGESPREAD
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW5NA90
STH5NA90FI
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
900
V
V
GS
I
D
±
30
V
5.3
3.5
A
I
D
3.4
2.2
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
21.2
21.2
A
P
tot
150
60
W
Derating Factor
1.2
0.48
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 2.5
< 2.5
I
D
STW5NA90
STH5NA90FI
900 V
900 V
5.3 A
3.5 A
January 1998
TO-247
ISOWATT218
1
2
3
1
2
3
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