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參數(shù)資料
| 型號(hào)： | STY140NS10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.22UF 100V 10% X7R AXIAL TR-14 |
| 中文描述： | N溝道100V的- 0.009歐姆-律目140A MAX247⑩⑩網(wǎng)眼密胺功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 254K |
| 代理商： | STY140NS10 |
1/8
August 2001
.
STY140NS10
N-CHANNEL 100V - 0.009
- 140A MAX247
MESH OVERLAY POWER MOSFET
I
TYPICAL R
DS
(on) = 0.009
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an advanced
family
of
power
MOSFETs
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
with
outstanding
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
SWITCH MODE POWER SUPPLY (SMPS)
TYPE
V
DSS
R
DS(on)
I
D
STY140NS10
100V
<0.011
140A
1
23
Max247
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
dv/dt
(2)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) Starting T
= 25
o
C, I
= 70A, V
DD
= 50V
(2) I
SD
≤
140A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Parameter
Value
100
100
± 20
140
99
560
450
3
2900
5
-55 to 175
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
°C
INTERNAL SCHEMATIC DIAGRAM
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