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參數(shù)資料
| 型號： | STY16NA90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 900V-0.5Ω-16A- Max247 Extremely Low Gate Charge Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道900V -0.5Ω- 16A條，Max247柵極電荷極低功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 47K |
| 代理商： | STY16NA90 |
STY16NA90
N - CHANNEL 900V - 0.5
- 16A - Max247
EXTREMELY LOW GATE CHARGE POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.5
I
EFFICIENT AND RELIABLEMOUNTING
THROUGH CLIP
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATECHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
DESCRIPTION
The Max247
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.54
I
D
STY16NA90
900 V
16 A
June 1998
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
900
V
V
GS
±
30
16
V
I
D
A
I
D
10
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
64
A
300
W
Derating Factor
2.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-55 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| STY30NK90Z | 功能描述:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY34NB50 | 功能描述:MOSFET N-Ch 500 Volt 34 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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