參數(shù)資料
型號(hào)： STW5NB90
廠商： 意法半導(dǎo)體
英文描述： N-Channel 900V-2.3Ω-5.6A- TO-247 PowerMESHTM MOSFET(N溝道MOSFET)
中文描述： N溝道900V -2.3Ω- 5.6A至247 PowerMESHTM MOSFET的（不適用溝道MOSFET的）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 46K
代理商： STW5NB90
STW5NB90
N - CHANNEL 900V - 2.3
- 5.6A - TO-247
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 2.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
an
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
HIGH CURRENT, HIGH SPEED SWITCHING
INTERNAL SCHEMATIC DIAGRAM
June 1998
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
900
900
±
30
5.6
3.3
22.4
160
1.28
4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤ 5 Α, ≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
dv/dt (
1
)
T
stg
T
j
TYPE
V
DSS
R
DS(on)
< 2.5
I
D
STW5NB90
900 V
5.6 A
1/5
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參數(shù)描述
STW5NK100Z 功能描述:MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW60N10 制造商:MISCELLANEOUS 功能描述:
STW60N65M5 功能描述:MOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW60NE10 功能描述:MOSFET N-Ch 100 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW60NM50N 功能描述:MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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