參數(shù)資料
型號(hào)： STW40NS15
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
中文描述： N溝道150伏- 0.042ohm - 40A至- 247 MOSFET的網(wǎng)格密胺⑩
文件頁數(shù)： 1/6頁
文件大?。?/td> 116K
代理商： STW40NS15
1/6
PRELIMINARY DATA
October 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STW40NS15
N-CHANNEL 150V - 0.042
- 40A TO-247
MESH OVERLAY MOSFET
I
NTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 0.042
I
EXTREMELY HIGH dv/dt CAPABILITY
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
This powermos MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY
process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW40NS15
150 V
<0.052
40A
Parameter
Value
Unit
150
V
150
V
±20
V
40
A
25
A
I
DM (1)
P
TOT
Drain Current (pulsed)
160
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
180
W
0.933
9
W/°C
V/ns
dv/dt
T
stg
T
j
Storage Temperature
–65 to 175
°C
Max. Operating Junction Temperature
175
°C
1
2
3
TO-247
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