參數(shù)資料
型號(hào)： STW40NS15
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
中文描述： N溝道150伏- 0.042ohm - 40A至- 247 MOSFET的網(wǎng)格密胺⑩
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 116K
代理商： STW40NS15
STW40NS15
2/6
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
0.83
62.5
0.5
°C/W
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
40
Unit
A
500
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
150
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±20V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 40 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.044
0.052
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
40
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 20A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
20
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
2400
pF
Output Capacitance
380
pF
C
rss
Reverse Transfer
Capacitance
160
pF
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