參數(shù)資料
型號： STW40NS15
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
中文描述： N溝道150伏- 0.042ohm - 40A至- 247 MOSFET的網(wǎng)格密胺⑩
文件頁數(shù)： 3/6頁
文件大小： 116K
代理商： STW40NS15
3/6
STW40NS15
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(off)
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 75V, I
D
= 20A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 120V, I
D
= 40A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
25
ns
t
r
45
ns
Q
g
Total Gate Charge
100
110
nC
Q
gs
Q
gd
Gate-Source Charge
17
nC
Gate-Drain Charge
47
nC
Parameter
Test Conditions
V
DD
= 75V, I
D
= 20A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
V
clamp
= 120V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Turn-off Delay Time
85
T
f
Fall Time
t
r(Voff)
Off-voltage Rise Time
47
ns
t
f
t
c
Fall Time
35
ns
Cross-over Time
70
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
40
A
Source-drain Current (pulsed)
160
A
Forward On Voltage
I
SD
= 40A, V
GS
= 0
I
SD
= 40A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
270
ns
Q
rr
I
RRM
Reverse Recovery Charge
200
nC
Reverse Recovery Current
1.5
A
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