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參數(shù)資料
| 型號： | STW20NB50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 500V-0.22Ω-20A- TO-247 PowerMESHTM MOSFET(Ｎ溝道MOSFET) |
| 中文描述： | N溝道500V -0.22Ω- 20A條至247 PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 221K |
| 代理商： | STW20NB50 |
STW20NB50
N - CHANNEL 500V - 0.22
- 20A - TO-247
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.22
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage technology,
SGS-Thomson has designed an advanced family
of power Mosfets with outstanding performances.
The new patent pending strip layout coupled with
the Company’s proprietary edge termination
structure, gives the lowest R
DS
(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled
gate
charge
characteristics.
and
switching
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1998
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
±
30
V
V
GS
V
I
D
I
D
20
A
12.7
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
80
A
P
tot
250
W
Derating Factor
2
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
20A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
150
TYPE
V
DSS
R
DS(on)
< 0.27
I
D
STW20NB50
500 V
20 A
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW20NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET |
| STW20NK50Z | 功能描述:MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW20NK50Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW20NK70Z | 功能描述:MOSFET N-Ch 700 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW20NM50 | 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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