參數(shù)資料
型號(hào)： STP16NK65Z-S
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET
中文描述： N溝道600V的- 0.38з - 14A條，220 / I2SPAK /至247齊納⑩MOSFET的保護(hù)SuperMESH
文件頁數(shù)： 2/11頁
文件大?。?/td> 283K
代理商： STP16NK65Z-S
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
2/11
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
V
ESD(G-S)
Gate source ESD (HBM-C= 100pF, R= 1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
14 A, di/dt
≤
200 A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
600
V
600
V
± 30
V
14
A
8.8
A
56
A
190
W
1.51
W/
°
C
6000
V
4.5
V/ns
Operating Junction Temperature
-55 to 150
°
C
TO-220/ I2SPAK
TO-247
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.66
°
C/W
°
C/W
°
C
62.5
50
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
14
Unit
A
360
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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STP170N8F7 功能描述:MOSFET N-CH 80V 120A TO-220AB 制造商:stmicroelectronics 系列:STripFET? F7 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:80V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:120A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:3.9 毫歐 @ 60A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:120nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:8710pF @ 40V 功率 - 最大值:250W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50
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