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參數(shù)資料
| 型號： | STGD6NC60HDT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT |
| 中文描述： | N溝道6A條- 600V的DPAK封裝IGBT的非?？霵owerMESH |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 224K |
| 代理商： | STGD6NC60HDT4 |
9/9
STGD6NC60HD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD6NC60HT4 | 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB120S-1 | 功能描述:IGBT 晶體管 N-CHANNEL 7A - 1200V IPAK POWERMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB120S-1_0008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT |
| STGD7NB120ST4 | 功能描述:IGBT 晶體管 N-Channel 7A-1200V IPAK PowerMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
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